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filingDate 2000-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2002-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2002-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-6448162-B1
titleOfInvention Method for producing schottky diodes
abstract A method for producing a Schottky diode formed of a doped guard ring in an edge area of the Schottky contact is described. The guard ring is produced by depositing a high barrier material, especially made of platinum, on the surface of the semiconductor layer. The surface is provided with a structured masking layer beforehand, and which is subsequently etch-backing.
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