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filingDate 2001-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2002-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2002-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-6448158-B2
titleOfInvention Method of patterning an ITO layer
abstract A method of patterning an indium tin oxide (ITO) layer is performed on a glass substrate. First, using sputtering, an amorphous ITO layer is deposited on the glass substrate. Then, using excimer laser annealing (ELA), the amorphous ITO layer within a predetermined pattern is turned into a crystalline ITO layer. Finally, using an etch solution, the amorphous ITO layer outside the predetermine pattern is removed.
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