| abstract |
An abrasive composition for polishing a semiconductor device, comprising cerium oxide, a water-soluble organic compound having at least one group of —COOH, —COOM x (wherein M x is an atom or a functional group capable of substituting a H atom to form a salt), —SO 3 H or —SO 3 M Y (wherein M Y is an atom or a functional group capable of substituting a H atom to form a salt), and water a process for forming shallow trench isolations using this abrasive composition. |