| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31662
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02249 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate |
1999-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2002-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6c0d0275a8d1c4ab527c1e5a06e5ece3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c73be318cb6a576438713cc787ae88cc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2dd89b04f62967396005a3e4efad0074
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_39e380d9b1bcee4d3b46c6db7f6aa994
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b1241cb6a05bfb166da6f0735e3fe22d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cd87a5215d903d32972398bd94aae1a5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_305f8035aeb2a6c4fb7857bd53a74133
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_725348491046e04b4902ec7b0b7ebbbf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6b93e13bbaa2185c2cc3b8a6785984d3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1239bc201c7cdb13e6d71f17ae82f356
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_24488da665a20c2d09c4a6be254d0316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a76e1317438bc07b08792c78e21ec919 |
| publicationDate |
2002-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6429101-B1 |
| titleOfInvention |
Method of forming thermally stable polycrystal to single crystal electrical contact structure |
| abstract |
A method for forming a thermally stable ohmic contact structure that includes a region of monocrystalline semiconductor and a region of polycrystalline semiconductor. At least one region of dielectric material is formed between at least a portion of the region of monocrystalline semiconductor and the region of polycrystalline semiconductor, thereby controlling grain growth of the polycrystalline semiconductor. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I489524-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8546249-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010055880-A1 |
| priorityDate |
1999-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |