| abstract |
The present invention provides a layer insulating film for multilayer interconnection of semiconductors which is excellent in resistance to heat, resistance to moisture absorption as well as in electric characteristic properties, and a process for producing the film. That is, a layer insulating film for multilayer interconnection of semiconductors which comprises a fluorine-containing polybenzoxazole resin having the structure represented by the formula (6) and obtained by a process which comprises subjecting to heat-dehydrating ring closure a fluorine-containing polyhydroxyamide resin obtained by reacting a dicarboxylic acid diester obtained from one kind of compound selected from the group of compounds represented by the formulas (2) and 2,2'-bis(tri-fluoromethyl)-4,4'-biphenyldicarboxylic acid, with 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane,(in the formula (6), m is an integer of 10-500). |