| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31053 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76837
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02129
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31608 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-4763
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate |
2000-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2002-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4bfd1b16264e9b621c0b4e25f93a82f6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_27d5e02520f3050ff3402fd7bc1a17f6 |
| publicationDate |
2002-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6423653-B1 |
| titleOfInvention |
Reduction of plasma damage for HDP-CVD PSG process |
| abstract |
A method for significantly reducing plasma damage during the deposition of inter-layer dielectric (ILD) gapfills on topographic substrates by high density plasma chemical vapor deposition (HDP-CVD). The method can also be applied to the deposition of dielectric layers on silicon oxide covered substrates. The method provides a modification of current state of the art practices in HDP-CVD by a novel variation in the RF input power to the plasma processing chamber during certain portions of the processing cycle. Specifically, top/side RF power is reduced from 3000W/4000W to 1300W/3100W during the heat-up portion of the cycle and plasma lift is eliminated during the wafer release and lift portion of the cycle by turning off the 1000W/2000W top/side RF power. A method for determining the degree of plasma induced damage by measurement of a flatband voltage is also provided. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7511936-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005109459-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010041245-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8034691-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007019360-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101662194-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6713406-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9991308-B2 |
| priorityDate |
2000-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |