| abstract |
A liner material and method of use is disclosed. The method includes depositing a silicon layer into a deep void, such as a via or trench, and physical vapor depositing a cobalt seed layer onto the silicon. A supplemental cobalt layer is electroplated over the seed layer. The structure is then annealed, forming cobalt silicide (CoSix). The layer can be made very thin, facilitating further filling the via with highly conductive metals. Advantageously, the layer is devoid of oxygen and nitrogen, and thus allows low temperature metal reflows in filling the via. The liner material has particular utility in a variety of integrated circuit metallization processes, such as damascene and dual damascene processes. |