Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_57341227c065dbddd1d3cf801bbaa86a |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3143 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-26 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02247 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0214 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-09 |
filingDate |
2001-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2002-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0cb614b97cf1155b0c2bcd4012e571f7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d3dd1dfd72ca6af46ff4069391c4ec35 |
publicationDate |
2002-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-6413885-B2 |
titleOfInvention |
Method for patterning semiconductor devices on a silicon substrate using oxynitride film |
abstract |
A method for fabricating and patterning semiconductor devices with a resolution down to 0.12 μm on a substrate structure. The method begins by providing a substrate structure comprising various layers of oxide and/or nitride formed over either monocrystalline silicon or polycrystalline silicon. A silicon oxynitride layer is formed on the substrate structure. Key characteristics of the oxynitride layer include: a refractive index of between about 1.85 and 2.35 at a wavelength of 248 nm, an extinction coefficient of between 0.45 and 0.75 at a wavelength of 248 nm, and a thickness of between about 130 Angstroms and 850 Angstroms. A photoresist layer is formed over the silicon oxynitride layer and exposed at a wavelength of between about 245 nm and 250 nm; whereby during exposure at a wavelength of between 245 nm 250 nm, the silicon oxynitride layer provides a phase-cancel effect. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6642141-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009146192-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7645657-B2 |
priorityDate |
1999-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |