http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6410447-B2

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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
filingDate 1999-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2002-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f12b49839181d6b784f680eb4d5e6107
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_91d9d6c9da9fe906b5bc2f8e61b553a3
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publicationDate 2002-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-6410447-B2
titleOfInvention Process for removing photoresist material
abstract A process for removing photoresist material without any residues left and damage to the in-process substrate is described. The present process for removing photoresist on an in-process substrate comprises the steps of providing a cover layer which is to be etched on the in-process substrate and providing a layer of photoresist material thereon. The photoresist layer is patterned, exposed and developed. Then, the developed photoresist layer is further exposed without using a mask. The cover layer is etched with the use of the patterned photoresist layer. After etching, the photoresist material is removed by a solvent.
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priorityDate 1998-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 32.