| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6a6c760472ee4c29e9cd26152ace2eb0 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-933
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-12674
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-12701
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-12875 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02175
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31604
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31691 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788 |
| filingDate |
1999-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2002-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c173beab7da4ee3a76d53501fd4466b2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_29f0505f1cd4a9d63e5356bc9490d468
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa9e06d3fd3d084867f579d850553b3c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_999c7b768b0de454f7826b7095ccdb85 |
| publicationDate |
2002-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6410343-B1 |
| titleOfInvention |
C-axis oriented lead germanate film and deposition method |
| abstract |
A ferroelectric Pb5Ge3O11 (PGO) thin film is provided with a metal organic vapor deposition (MOCVD) process and RTP (Rapid Thermal Process) annealing techniques. The PGO film is substantially crystallization with c-axis orientation at temperature between 450 and 650° C. The PGO film has an average grain size of about 0.5 microns, with a deviation in grain size uniformity of less than 10%. Good ferroelectric properties are obtained for a 150 nm thick film with Ir electrodes. The films also show fatigue-free characteristics: no fatigue was observed up to 1x109 switching cycles. The leakage currents increase with increasing applied voltage, and are about 3.6x10-7A/cm2 at 100 kV/cm. The dielectric constant shows a behavior similar to most ferroelectric materials, with a maximum dielectric constant of about 45. These high quality MOCVD Pb5Ge3O11 films can be used for high density single transistor ferroelectric memory applications because of the homogeneity of the PGO film grain size. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8232114-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010190274-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7153708-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2003207473-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6664116-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7008801-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006035390-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6616857-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6794198-B1 |
| priorityDate |
1999-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |