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filingDate 1999-04-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2002-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2002-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-6401728-B2
titleOfInvention Method for cleaning interior of etching chamber
abstract A process for cleaning the interior walls of a reaction chamber after a number of silicon wafers is etched inside the chamber. The cleaning process includes bombarding the interior walls of the chamber with a first type of plasma in a dry cleaning operation, and then bombarding the interior walls of the chamber with a second type of plasma containing the element hydrogen in a warm-up operation. No silicon wafers need to be placed inside the chamber when the dry cleaning operation or the warm-up operation is conducted.
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