abstract |
A dielectric ceramic material is provided. The ceramic material includes a mixture represented by the formula of Bi 2−x (Zn 2/3 Nb 4/3 )O 7−3x/2 (BZN), 0≦x≦0.67, and a flux having an eutectic composition for lowering the sintering temperature of the mixture from 950˜1100° C. to 800˜850° C. The dielectric material has a dielectric constant larger than 45 (∈ r >45) and a quality factor larger than 1200 (or Q·f>4500) at 3.5 GHz. |