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filingDate 2000-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2002-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-6395663-B1
titleOfInvention Low temperature sintered BI2O3-ZNO-NB2O5 ceramics and method for its formation
abstract A dielectric ceramic material is provided. The ceramic material includes a mixture represented by the formula of Bi 2−x (Zn 2/3 Nb 4/3 )O 7−3x/2 (BZN), 0≦x≦0.67, and a flux having an eutectic composition for lowering the sintering temperature of the mixture from 950˜1100° C. to 800˜850° C. The dielectric material has a dielectric constant larger than 45 (∈ r >45) and a quality factor larger than 1200 (or Q·f>4500) at 3.5 GHz.
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