| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0e433c1625fc509a087c912b440da84b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-972 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66825
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42324 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 |
| filingDate |
2001-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2002-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa3e8101d10331ec86471ba1b781e2b9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a6563a6ef9da434ded390df2b9208a25
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a8d01fc6771123fbbf87775215952f71 |
| publicationDate |
2002-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6383870-B2 |
| titleOfInvention |
Semiconductor device architectures including UV transmissive nitride layers |
| abstract |
A transistor 10 is formed on an outer surface of a substrate 12. The transistor comprises a floating gate 18 and a control gate 20. An outer encapsulation layer 22 and sidewall bodies 26 and 28 comprise silicon nitride that is deposited in such a manner such that the material is transmissive to ultraviolet radiation. In this manner, the sidewall bodies 26 and 28 and the layer 22 can be used as an etch stop during the formation of a drain contact 38 . These layers will also permit the transmission of ultraviolet radiation to the floating gate 18 to enable the erasure of floating gate 18. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007007578-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005106797-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004005760-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6656778-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7372157-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7026170-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6777291-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7015534-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004201060-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005098825-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2003089993-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6803624-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005079696-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6873005-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7091119-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7091549-B2 |
| priorityDate |
1998-01-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |