http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6383693-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-143 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-064 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2061 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-06 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20 |
| filingDate | 2000-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2002-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ec27fced3f55022cd2c97f0c735eed3f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3183942a70e7c503823d7c1b52ebe8d5 |
| publicationDate | 2002-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-6383693-B1 |
| titleOfInvention | Method of forming a photomask utilizing electron beam dosage compensation method employing dummy pattern |
| abstract | A method for forming a patterned target layer from a blanket target layer while employing a blanket photoresist layer in conjunction with an exposure method which is susceptible to a proximity effect employs when exposing the blanket photoresist layer to form an exposed blanket photoresist layer a main latent pattern and a second latent pattern adjacent the main latent pattern. Each patterned photoresist layer formed upon developing the main latent pattern is formed of a first linewidth such that not all of a first portion of the blanket target layer formed therebeneath is etched within an isotropic etchant which is employed for etching the blanket target layer to form the patterned target layer. In contrast, each patterned photoresist layer formed upon developing the second latent pattern is formed of a second linewidth such that all of a second portion of the blanket target layer formed therebeneath is etched within the isotropic etchant which is employed for etching the blanket target layer to form the patterned target layer. The method is particularly useful for efficiently forming a photomask while attenuating a proximity effect. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7569842-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I471925-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006284120-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106973514-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10520808-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103491714-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8470515-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103000497-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111432567-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019079395-A1 |
| priorityDate | 2000-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.