| abstract |
A pressed-contact type semiconductor device in which a main electrode surface of a semiconductor element is contacted with an electrode plate by a pressed-contact, which can reduce both an electric resistance and a thermal resistance between the main electrode surface of the semiconductor element and the electrode plate. The pressed-contact type semiconductor device (100) is provided with a semiconductor element (1) having electrode surfaces, a pair of electrode plates (2) contacted with the electrode surfaces by the pressed-contact, a pair of insulating plates (3) contacted with the outer side of the pair of the electrode plates by the pressed-contact, and a pair of radiating plates (4) contacted with the outer side of the pair of the insulating plates by the pressed-contact. A contact intermediary member (5), which is made up of particle member having at least thermal conductivity and electric conductivity, is intercalated between the semiconductor element and the electrode plate. The particle member of the contact intermediary member includes large particles 5a having an average particle diameter of more than 2 mum, and small particles 5b having an average particle diameter of to or less than 2 mum. Contact intermediary members (6, 7) are intercalated into gaps generated between the electrode plate and the insulating plate, and between the insulating plate and the radiating plate so as to fill up these gaps. The contact intemediary members are made of powder material having at least thermal conductivity. |