| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c3a2f00e72ba6e4c09b6da573427fbed |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02131
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02129
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31612
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-30 |
| filingDate |
1999-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2002-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3560fef069e0d0049dda64f2e0fa28f0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e3d1b4a49fd1a27539f0c1f1c6c63026 |
| publicationDate |
2002-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6372669-B2 |
| titleOfInvention |
Method of depositing silicon oxides |
| abstract |
The invention comprises methods of depositing silicon oxide material onto a substrate. In but one aspect of the invention, a method of depositing a silicon oxide containing layer on a substrate includes initially forming a layer comprising liquid silicon oxide precursor onto a substrate. After forming the layer, the layer is doped and transformed into a solid doped silicon oxide containing layer on the substrate. In a preferred implementation, the doping is by gas phase doping and the liquid precursor comprises Si(OH) 4 . In the preferred implementation, the transformation occurs by raising the temperature of the deposited liquid precursor to a first elevated temperature and polymerizing the deposited liquid precursor on the substrate. The temperature is continued to be raised to a second elevated temperature higher than the first elevated temperature and a solid doped silicon oxide containing layer is formed on the substrate. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7288463-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7135418-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7202185-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7297608-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7294583-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7148155-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007014801-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7223707-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7790633-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7491653-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7863190-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7163899-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7625820-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7097878-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7109129-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7271112-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7589028-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7482247-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7129189-B1 |
| priorityDate |
1997-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |