http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6365484-B1

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filingDate 2000-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2002-04-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3370c30e5c5953ca935f72345a40a457
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a721c4610a7ec57574caca37249c3c03
publicationDate 2002-04-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-6365484-B1
titleOfInvention Method of forming semiconductor device with decoupling capacitance
abstract A semiconductor device is disclosed that provides a decoupling capacitance and method for the same. The semiconductor device includes a first circuit region having a first device layer over an isolation layer and a second circuit region adjacent the first circuit region having a second device layer over a well. An implant layer is implanted beneath the isolation layer in the first circuit region, which will connect to the well of the second circuit region.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013113043-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9006827-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8119472-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007231979-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9040373-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8232153-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8633071-B2
priorityDate 1998-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 31.