| abstract |
A method of forming a gate oxide layer in a s conductor device which can obtain low leakage current and high reliability with obtaining effective thickness of 40 Å or lees, is disclosed. n According to the present invention, a NO-oxynitride layer as the bottom oxide layer is formed on a semiconductor substrate and a tantalum oxide layer as the medium oxide layer is thereon. The oxide layer is then formed on the tantalum oxide layer and the substrate is thermal-treated under N 2 O gas atmosphere. |