| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_86df70be6baafcc380c5c26c307c005b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T29-49156
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T29-49155
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T29-49162
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-952 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31133
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3213 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-469
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-4763
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 |
| filingDate |
1998-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2002-02-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7012af116e91a50c9dcb41d71beef206
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1b98e393777e5093080ad41873d0b342 |
| publicationDate |
2002-02-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6348404-B1 |
| titleOfInvention |
Wiring forming method |
| abstract |
After a wiring material layer (14) which is made of WSi2 or the like is formed on an insulation film covering a semiconductor substrate (10), a first antireflection coating film (16) which is made of TiON or TiN and a second antireflection coating film (18) which is made of an organic material are sequentially formed on the wiring material layer (14). Resist patterns (20a to 20c) are formed on the second antireflection coating film (18) by photolithography. The dry etching of the second antireflection coating film (18) is performed using the resist patterns (20a to 20c) as masks, after which the dry etching of the first antireflection coating film (16) is conducted using the resist patterns (20a to 20c) and patterns (18a to 18c) of the second antireflection coating film (18) as masks. The dry etching of the wiring material layer (14) is effected using the resist patterns (20a to 20c), the patterns (18a to 18c) of the second antireflection coating film (18) and patterns (16a to 16c) of the first antireflection coating film (16) as masks. The resist patterns (20a to 20c) and the patterns (18a to 18c) of the second antireflection coating film (18) are removed. Lamination layers, each including one of patterns of the wiring material layer (14) and one of the patterns of the first antireflection coating film (16), form wiring layers. The resist patterns (20a to 20c) and the patterns of the second antireflection coating film ( |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006220186-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6599682-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004033444-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7033930-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8903470-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6694275-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8903469-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6709971-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6835651-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2003029035-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012302871-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005048410-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7060635-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004038523-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-100365764-C
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11092894-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010087730-A1 |
| priorityDate |
1997-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |