| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c3a2f00e72ba6e4c09b6da573427fbed |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-60 |
| filingDate |
1999-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2001-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_51720eac2e27f60d8c32fa082c024d79 |
| publicationDate |
2001-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6331495-B1 |
| titleOfInvention |
Semiconductor structure useful in a self-aligned contact etch and method for making same |
| abstract |
A semiconductor processing method is provided for making contact openings. It includes depositing several insulative layers and performing an anisotropic etch. One layer is a conformal oxide covering the contact area and adjacent structures. A second layer is a breadloafed oxide deposited over the contact area and adjacent structures. A third layer is a doped oxide deposited over the two lower layers. The anisotropic etch is performed through the oxide layers to the contact area located on a lower substrate. The etch is selectively more rapid in the third oxide than in the two other oxides. The breadloafed oxide provides additional protection and reduces the risk of etch-through to conductive structures adjacent the contact area. An alternate embodiment replaces the two lowest oxide layers by a breadloafed nitride layer. In this embodiment, the anisotropic etch is selectively more rapid in oxides than in nitrides. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6972223-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006292801-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006072781-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2988322-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008286926-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6791138-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9502264-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7723229-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008267515-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7397584-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008081463-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2003054623-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006240654-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006072778-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010099263-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7846795-B2 |
| priorityDate |
1998-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |