| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8d2af79a721351e9e324691b802260e0 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-906 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02488
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-02 |
| filingDate |
1999-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2001-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7b6f7391d275b65527531790e7a0b02c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_01126a7a79e03137a705f09fee14d933
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1a9dd73c7d236a19a2637b967d45b37e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8bc1442edb6e9073430bcc8e6125e8a2 |
| publicationDate |
2001-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6323140-B1 |
| titleOfInvention |
Method of manufacturing semiconductor wafer |
| abstract |
Disclosed is a method for manufacturing a semiconductor wafer having an epitxial layer on a surface thereof, by the steps of forming a pritective oxide film on a surface of a semiconductor wafer prior to loading of the wafer into an eptaxial growth furnace, removing the protective oxide film formed on the surface of the wafer by heating after the wafer is loaded in the furnace, and performing epitaxial growth of the epitaxial layer on the surface from which the protective oxide film is removed in the furnace. The protective oxide film is removed by heating the wafer in the furnace in an ambience of hydrogen gas at a pressure ranging from 0.0133×10 5 Pa to 1.013×10 5 Pa and at a temperature ranging from 800° C. to 1,000 ° C., or by heating the wafer in the furnace at a pressure of 5×10 6 Pa or under and at a temperature ranging from 800° C. to 1,000° C. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7226513-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7170184-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004045580-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008057324-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6566267-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9340900-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6802911-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2003056806-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2003109081-A1 |
| priorityDate |
1998-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |