Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5258 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-525 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
filingDate |
1999-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2001-10-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b0a9c4234463a54003b73ff5519a7168 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5a1710acb38f11fc839a14c8229a61d3 |
publicationDate |
2001-10-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-6300252-B1 |
titleOfInvention |
Method for etching fuse windows in IC devices and devices made |
abstract |
A method is provided for etching fuse windows through a passivation layer and at least two inter-metal dielectric layers that are deposited on top of a fuse when the fuse is embedded in an insulating material including a top layer of silicon nitride on a semi-conducting substrate. The method can be carried out by a two-step etching process in which an opening is first etched for the fuse window through a passivation layer by a first etchant that has low selectivity to the passivation material, and then the opening is etched through the IMD layers in a second etching process by a second etchant which has high selectivity to the silicon nitride etch-stop layer. The two-step etching process can be easily controlled so that the quality and yield for the resulting fuse windows can be improved. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7238620-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6664141-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6784516-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6597055-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2007059480-A2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2007059480-A3 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004089916-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6432760-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005205965-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7029955-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7589397-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015364397-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7144749-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9559032-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7067896-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7745343-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2003058708-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6756313-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004056325-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008160652-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007111403-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6946379-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004217384-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-101211779-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006244156-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6518643-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6852628-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7622395-B2 |
priorityDate |
1999-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |