| abstract |
A p-type zinc oxide film and a process for preparing the film is disclosed. In a preferred embodiment, the p-type zinc oxide film contains arsenic and is grown on a gallium arsenide substrate. The p-type zinc oxide film has a net acceptor concentration of at least about 10 15 acceptors/cm 3 , a resistivity of no greater than about 1 ohm-cm, and a Hall mobility of between about 0.1 and about 50 cm 2 /Vs. |