Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5b697aa5d3346981b6c6de88dcb0d50d |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76886 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-321 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-321 |
filingDate |
1999-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2001-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5e8de1b66f54570a901baf6a14472e58 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1ec99fe3dc3e70bea845f5fdfc1f8903 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d59f99d6930d8dbad9d87fce01753217 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e90525224e0b0f394b0ce89f945bf9d8 |
publicationDate |
2001-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-6287970-B1 |
titleOfInvention |
Method of making a semiconductor with copper passivating film |
abstract |
A method of making a semiconductor device includes the steps of forming an oxide layer adjacent a semiconductor substrate, etching trenches within the oxide layer, depositing a copper layer to at least fill the etched trenches, and forming a copper arsenate layer on the deposited copper layer. The copper arsenate layer is then chemically mechanically polished. The copper layer may be deposited by at least one of electrodeposition, electroplating and chemical vapor deposition. The copper arsenate layer on the surface of the deposited copper layer inhibits oxidation and corrosion and stabilizes the microstructure of the deposited copper layer to thereby eliminate a need to subsequently anneal the deposited copper layer. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9219036-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8785324-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008233745-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008206994-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8999842-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8039398-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8053356-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7655556-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8330275-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7834458-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102007009902-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011027991-A1 |
priorityDate |
1999-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |