| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-039
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-40 |
| filingDate |
1999-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2001-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ccc90cef43e01f47f5daf0b7c099c9cd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ece4996ab2f31e7f5aa862fc4ddd85b1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aeccccd9ca7e625aa8047cedf1493d11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1df85eaaecb43cea07de301f902d62d2 |
| publicationDate |
2001-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6284438-B1 |
| titleOfInvention |
Method for manufacturing a photoresist pattern defining a small opening and method for manufacturing semiconductor device using the same |
| abstract |
A method for manufacturing a photoresist pattern that defines an opening having a small size, and a method for manufacturing a semiconductor device using the same are provided. A photoresist pattern defining the opening can be formed using a photoresist composition that includes either polymer mixture I containing a polymer A in which an acid-labile di-alkyl malonate group is pendant to the polymer backbone, and a polymer B in which a group that thermally decomposes at a temperature lower than the glass transition temperature of the polymer B itself is pendant to the polymer backbone, or polymer mixture II containing the polymer B and a polymer C including a (meth)acrylate as a monomer, as a main component. The size of the opening then can be reduced by thermal flowing the photoresist pattern. It is possible to form the photoresist pattern defining an opening having a small size since the photoresist composition comprises the polymer mixture which has advantageous characteristics, such as high contrast, and in which the flow rate of the composition upon thermal flowing can easily be controlled. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2003180668-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004029034-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006141397-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7402379-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7001853-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006073425-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110931354-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005019702-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6737214-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7169545-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6632590-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6872510-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110931354-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6582860-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005058914-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6875552-B2 |
| priorityDate |
1998-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |