| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76819 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
1998-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2001-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a9fc8ad13db4d99e3005b1174d4dddae
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_27d5e02520f3050ff3402fd7bc1a17f6 |
| publicationDate |
2001-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6271123-B1 |
| titleOfInvention |
Chemical-mechanical polish method using an undoped silicon glass stop layer for polishing BPSG |
| abstract |
A method using chemical-mechanical polishing for planarizing a BPSG layer 30 using a overlying Undoped Silicate Glass (USG) cap layer 40 comprising:(a) form a BPSG layer 30 over the semiconductor structure 12; the BPSG layer 30 over the periphery area 16 having a first thickness;(b) form a cap layer 40 composed of undoped silicon glass (USG) over the BPSG layer 30; the cap layer has a thickness that is at less than half of the first thickness of the BPSG layer; the top surface of the cap layer 40 in the cell area 14 is higher than the top surface of the BPSG layer 30 in the periphery area 16;(c) chemical-mechanical polish the cap layer 40 and the BPSG layer 30 over the cell area using the cap layer 40 over the periphery area 16 to retard the chemical-mechanical polish process when the top surface of the BPSG layer 30 over the cell area 14 is even with the cap layer 40 over the periphery area 16; and the cap layer 40 remains over the Periphery area 16. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012149185-A1
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006172530-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005014330-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006172531-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7135402-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8871103-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007150093-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014038414-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006099802-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9157012-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100439047-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6531362-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8822287-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014326701-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7365026-B2 |
| priorityDate |
1998-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |