| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1374dd16777534b65ad4422333245af8 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-1352
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S206-833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-673 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08L77-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08L67-02 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08L77-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-673
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08L67-02 |
| filingDate |
1997-04-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2001-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ed50006de0f841ff1fec15c608348534
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0a2e64247fd148dd6905ec6d0e46e8b0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1189d347f7f76f7e6a70fe45c65f7839
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c2b760476fea0ba1d49eb07e7ee810ee |
| publicationDate |
2001-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6268030-B1 |
| titleOfInvention |
Silicon wafer carrier |
| abstract |
The present invention relates to a silicon wafer carrier consisting of a composition composed of (a) 100 parts by weight of a polyester, (b) 5 to 100 parts by weight of a polyether ester amide, (c) 10 to 2,500 ppm (based on the polyether ester amide) of an alkaline metal and (d) 0 to 40 parts by weight of a modified polyolefin, generating not more than 10 ppm of volatile gas by the heat-treatment at 150° C. for 60 minutes and eluting not more than 10 ppm of the alkaline metal by the immersion treatment in pure water at 80° C. for 120 minutes. The silicon wafer carrier has the generation of volatile gas and the elution of metal suppressed to an extent not to essentially cause the surface contamination of a silicon wafer and is provided with excellent permanent antistaticity and high mechanical properties and heat-resistance. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2010127341-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8163848-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6871657-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-100380577-C
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6797804-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2003212242-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010280193-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2003121533-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6740410-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011020573-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2003003302-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6608169-B2 |
| priorityDate |
1997-04-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |