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filingDate 1999-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2001-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2001-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-6258685-B1
titleOfInvention Method of manufacturing hetero-junction bipolar transistor
abstract A method of manufacturing a hetero-junction bipolar transistor including a carbon-doped base layer includes the steps of (a) growing a base layer on an underlying layer through chemical vapor deposition, (b) forming at least one semiconductor layer over the base layer, and (c) then subjecting the base layer to thermal annealing at a temperature of 520° C. to 650° C.
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