| abstract |
A gate stack ( 104 ) including a gate dielectric with reduced effective electrical thickness. A high-k dielectric ( 108 ) is formed over the silicon substrate ( 102 ). Remote plasma nitridation of the high-k dielectric is performed to create a nitride layer ( 107 ) over the high-k dielectric ( 107 ). A conductive layer ( 110 ) is formed over the nitride layer ( 107 ) forming the gate electrode. |