| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3a62c92e56568bd104089aac22ca487b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-954 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B69-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246 |
| filingDate |
1999-10-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2001-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cc1d652a14855131819dd3b6bb379471
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3f33ee711fbf45bc476bde2dcd84aff3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_73b241a2c63153fd79ee50efcf63bdde
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f3d89cf30076945d7efb1bdb3b9eb5ba |
| publicationDate |
2001-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6248635-B1 |
| titleOfInvention |
Process for fabricating a bit-line in a monos device using a dual layer hard mask |
| abstract |
A process for fabricating a MONOS device having a buried bit-line includes providing a semiconductor substrate and forming an ONO structure to overlie the semiconductor substrate. Thereafter, a thin mask layer is formed to overlie the ONO structure to protect the ONO structure during a selective etch of a thick mask layer. The thick mask layer is formed to overlie the thin mask layer to protect the ONO structure during boron and arsenic implants. Thereafter, an etch process is performed in the ONO structure and a silicon oxide layer is formed to fill the etched area. A chemical-mechanical-polishing process is performed to planarize the silicon oxide layer and to form a planar surface continuous with an upper surface of the thick mask layer. The planarized silicon oxide layer functions as a bit-line oxide layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9024283-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6989320-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9349949-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6987048-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-100452310-C
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6723649-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7811915-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010330762-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008157187-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005012149-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6362054-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7078351-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6828199-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6764903-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007212889-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9627442-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6642148-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6762459-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6858899-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006228899-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7972948-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005255651-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7038258-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004069990-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7662718-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2005114734-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6794235-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2003141278-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7910483-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6680509-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-10258420-B4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6440797-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010173498-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004217411-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7053446-B1 |
| priorityDate |
1999-10-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |