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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
filingDate 1999-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2001-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e24998c5ecec6ad5dd1d2d4d1092c6d6
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publicationDate 2001-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-6245656-B1
titleOfInvention Method for producing multi-level contacts
abstract The present invention relates to a method for overcming problems of amplified exposure light interference from shrinked devices and difficulties of photolithographic and etching process control due to multi-level contacts. The present invention combines reflective lights from multiple levels into one single light and reduces interference of reflective lights by introducing a reflective coating and an anti-reflective coating of SiON/Ti or SiON/TiN/Ti which further serve as an etching hard mask for avoiding overetching. The process windows are expanded. Semiconductor devices can be further shrunk and production yields an be improved.
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