| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-55 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-409
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02197
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31691 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate |
1999-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2001-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_665b574034ff4e1be72b23f18617e1ed
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_67fb5643b4e6c33433857d14b3f4e089
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3083ca222076d4bb32f045ea6cf6a7a7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e4a355fc5ee4ae2a11558a66ac1acca3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_76beecf3410c1d68016f025e594811f9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d8893c769178e9acd66101c776a38c30 |
| publicationDate |
2001-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6235649-B1 |
| titleOfInvention |
Method of forming high dielectric constant thin film and method of manufacturing semiconductor device |
| abstract |
A method of forming a (Ba, Sr) TiO3 high dielectric constant thin film with sufficient coverage is provided. A Ba material, an Sr material and a Ti material including bis (t-butoxy) bis (dipivaloylmethanate) titanium are dissolved in an organic solvent to obtain a solution material. The solution material is vaporized, so that material gas is obtained. A (Ba, Sr) TiO3 thin film is formed on a substrate by CVD reaction using the material gas. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005031495-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6589856-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009050210-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6673646-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6709989-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6501121-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6448191-B2 |
| priorityDate |
1999-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |