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filingDate 1999-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8d9b1419b48073b1ae5ac7d3475dc8af
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publicationDate 2001-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-6232221-B1
titleOfInvention Borderless vias
abstract Borderless vias are formed by depositing a hard dielectric mask layer on the upper surface of a lower metal feature and forming sidewall spacers on the side surfaces of the metal feature and mask layer. A dielectric interlayer is deposited and a misaligned through-hole formed therein by etching. The dielectric material of the sidewall spacer and dielectric material of the dielectric interlayer are different. The etchant employed to form the through-hole exhibits a high selectivity with respect to the sidewall spacer material. The dielectric mask layer enables the formation of a sidewall spacer extending above the metal feature such that, after etching to form the misaligned through-hole, the sidewall spacer covers the side surface of the metal feature.
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