| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76229 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
| filingDate |
1999-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2001-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9263b7b2c38930f997a6a566810a7a68 |
| publicationDate |
2001-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6221734-B1 |
| titleOfInvention |
Method of reducing CMP dishing effect |
| abstract |
A method of reducing a chemical mechanical polishing (CMP) dishing effect. A plurality of trenches are formed in the substrate, while a first insulating layer, such as silicon oxide layer is formed on the substrate to fill those trenches. A chemical reaction, such as nitridation reaction, is performed on the surface of the insulating layer to form a second insulating layer, which is harder than the first insulating layer. CMP is then performed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6770523-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7018886-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006121394-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005026390-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9425206-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7320926-B2 |
| priorityDate |
1999-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |