| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8dfdde00a167036f3bfbd1afcbef4a76 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76895
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-482
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-315
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-84 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-0335
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-90 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-60 |
| filingDate |
1999-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2001-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ed8fbc6c91c871bc59a93ac1098129e2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2719b3a9e043aed7bf1ec068a3a846d1 |
| publicationDate |
2001-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6211091-B1 |
| titleOfInvention |
Self-aligned eetching process |
| abstract |
The invention describes a self-aligned etching process. A conductive layer and a first insulating layer are formed on a substrate in sequence, and then the conductive layer and the first insulating layer are patterned to form a plurality of stacks on desired regions. Subsequently, spacers are formed on sidewalls of each stack, and a stop layer is then formed on the substrate. A second insulating layer is formed on the substrate and is planarized. Portions of the second insulating layer are removed to form a plurality of openings and to expose portions of the stop layer located between spacers. The exposed stop layer is removed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7989863-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004149992-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009267231-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004126966-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7052983-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006202340-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007072411-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8999839-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011198757-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8106435-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102004003315-B4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9484356-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7342275-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6924229-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10361152-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8456009-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7572721-B2 |
| priorityDate |
1999-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |