http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6194280-B1
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0e433c1625fc509a087c912b440da84b |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66272 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331 |
filingDate | 1999-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2001-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_191ffad4ec6a692a9b6affcc75e609d2 |
publicationDate | 2001-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | US-6194280-B1 |
titleOfInvention | Method for forming a self-aligned BJT emitter contact |
abstract | A bipolar transistor includes a collector region, an intrinsic base region within the collector region, an extrinsic base region within the collector region, and a base link-up region within the collector region between the intrinsic base region and the extrinsic base region. An emitter region is positioned within the intrinsic base region. A base electrode overlays and is in electrical communication with a portion of the extrinsic base region and the base link-up region, and a doped inter-polysilicon dielectric layer overlays a portion of the base electrode. A capping layer is positioned above the inter-polysilicon dielectric layer; and an emitter electrode overlays the inter-polysilicon dielectric layer and the emitter region. The doped inter-polysilicon dielectric layer is the dopant source for forming the extrinsic base region and the base link-up region. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6686250-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-10202291-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006267146-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012088374-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8450162-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6716711-B1 |
priorityDate | 1998-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.