http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6191021-B1

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filingDate 1997-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2001-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3e368c3477a1b5d5c63dbb55241d9907
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publicationDate 2001-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-6191021-B1
titleOfInvention Method of forming a low-resistance contact on compound semiconductor
abstract Generally, and in one form of the invention, a method is disclosed for forming an ohmic contact on a GaAs surface 20 comprising the steps of depositing a layer of InGaAs 22 over the GaAs surface 20 , and depositing a layer of TiW 24 on the layer of InGaAs 22 , whereby a reliable and stable electrical contact is established to the GaAs surface 20 and whereby Ti does not generally react with the In.
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010244105-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010222277-A1
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005199911-A1
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