abstract |
Generally, and in one form of the invention, a method is disclosed for forming an ohmic contact on a GaAs surface 20 comprising the steps of depositing a layer of InGaAs 22 over the GaAs surface 20 , and depositing a layer of TiW 24 on the layer of InGaAs 22 , whereby a reliable and stable electrical contact is established to the GaAs surface 20 and whereby Ti does not generally react with the In. |