http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6187705-B1

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filingDate 1999-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2001-02-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7d76caf94150617dfba662e6a4a282dd
publicationDate 2001-02-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-6187705-B1
titleOfInvention Creep-resistant, high-strength silicon carbide fibers
abstract A high strength, high creep resistant, boron-doped, silicon carbon fiber having no boron nitride coating, originally formed by sintering, is produced by exposing the fiber to a nitrogen atmosphere at a temperature equal to or preferably elevated above the sintering temperature and also exposing the fiber to a carbon monoxide-containing atmosphere at a temperature sufficient to remove boron and boron nitride. The nitrogen atmosphere step may be performed before or after the carbon monoxide-containing atmosphere step. The resulting, uncoated SiC fibers have tensile strengths greater than approximately 2.0 GPa and Morscher-DiCarlo BSR test creep resistance M values greater than approximately 0.75 at 1400 degrees C for one hour in argon. The method is applicable to non-sintered fibers as well, in which case the nitrogen exposure is carried out at between approximately 1750 to 2250 degrees C and the carbon monoxide exposure is carried out at between approximately 1600 to 2200 degrees C.
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1637271-A1
priorityDate 1997-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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