| abstract |
A semiconductor waveguide type photo detector capable of preventing leak current from occurring and excellent in dark current characteristics, and a manufacturing method thereof are provided. In a semiconductor waveguide type photo detector, a layered structure is formed on a semiconductor substrate, the layered structure formed by building a first semiconductor layer, a second semiconductor layer and a third semiconductor layer in due order, the first semiconductor layer being of one of p type and n type, the second semiconductor layer having lower band gap energy than that of the first semiconductor layer, the third semiconductor layer having higher band gap energy than that of the second semiconductor layer and having a conductive type opposite to that of the first semiconductor layer, and wherein at least the second semiconductor layer of the layered structure has a semiconductor waveguide having a mesa stripe structure, and at least a side surface and/or a light incidence end face of the second semiconductor layer is curved. |