| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_709b4a26ef028713f9b302509eb824d7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31612
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-5096
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-402
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02315 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-509
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40 |
| filingDate |
1998-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2000-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_542c58b914143721f557c35be257bdc6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_68cad6b04ce0ef7cb006e335a1147c6a |
| publicationDate |
2000-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6159559-A |
| titleOfInvention |
Low temperature, high quality silicon dioxide thin films deposited using tetramethylsilane (TMS) |
| abstract |
Silicon dioxide thin films have been deposited at temperatures from 40° C. to 250° C. by plasma enhanced chemical vapor deposition (PECVD) using tetramethylsilane (TMS) as the silicon containing precursor. The properties of the PECVD TMS oxides (PETMS-Oxs) were analyzed with Fourier TransformInfrared (FTIR) transmissionspectroscopy, BOEand P-etch rates and both current-voltage (I-V) and capacitance-voltage (C-V) electrical characterization. It was found that the deposition rate for films produced from TMS increased with decreasing temperature; that the --OH inclusions could be affected by TMS flow rate; and that He dilution rate affected trapping for films produced over the temperature range explored. At both 130° C. and 250° C., deposition conditions were identified which formed high quality as-deposited oxide films. Under the best conditions, unannealed Al/PETMS-Ox/c-Si capacitor structures displayed flat band voltages of V fb -2.9 V and breakdown fields (V bd ) in excess of 8 MV/cm. These PETMS-Ox films also show low leakage current densities <10 -9 A/cm 2 which can be maintained up to fields in excess of 4.5 MV/cm. The PETMS oxide electrical quality and process simplicity combined to make an attractive oxide deposition technology for low temperature, large area applications. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2823083-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2823083-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010233664-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6902960-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010330770-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009238997-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011042347-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009294967-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2003118845-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7202167-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2003124873-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8323995-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6531193-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7951619-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6689646-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7381595-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005042887-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8702999-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005218406-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8323753-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011201200-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7811840-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7030038-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007190742-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6794295-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010147794-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2002182342-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8338307-B2 |
| priorityDate |
1997-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |