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filingDate 1999-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2000-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4b7fcac1cc9c6f2af75147a408f58730
publicationDate 2000-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-6156480-A
titleOfInvention Low defect thin resist processing for deep submicron lithography
abstract In one embodiment, the present invention relates to a method of forming a short wavelength thin photoresist coating having a low defect density by depositing sequentially at least two discrete ultra-thin photoresist layers to form the short wavelength thin photoresist coating, each ultra-thin photoresist layer independently having a thickness from about from about 200 Å to about 2,500 Å, the short wavelength thin photoresist coating, having a thickness of about 5,000 Å or less.
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Total number of triples: 35.