http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6137177-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28052 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823828 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0928 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 1998-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2000-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_38c3bc83d408609840f9f513fc2776b0 |
| publicationDate | 2000-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-6137177-A |
| titleOfInvention | CMOS semiconductor device |
| abstract | There is provided a method of fabricating a CMOS semiconductor device including nMOSFET and pMOSFET, including the steps of (a) forming a gate insulating film on a semiconductor substrate, (b) forming a first polysilicon film on the gate insulating film, (c) forming an interlayer insulating film on the first polysilicon film, (d) forming a second polysilicon film on the interlayer insulating film, (e) shaping the first polysilicon film, the interlayer insulating film, and the second polysilicon film into a gate electrode in both a first region where the nMOSFET is to be fabricated and a second region where the pMOSFET is to be fabricated, and (f) doping n-type impurities into the first region and p-type impurities into the second region by ion-implantation. The method makes it possible to prevent reduction in dielectric voltage of a gate insulating film, which would be caused by diffusion of titanium atoms, without causing a gate electrode to be depleted. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6693341-B2 |
| priorityDate | 1997-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 38.