http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6120909-A

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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B1-00
filingDate 1998-08-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2000-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6cb9b5474ea4d1c8c60e1553682b53db
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_165efc7d3a119c860219809066ab1115
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publicationDate 2000-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-6120909-A
titleOfInvention Monolithic silicon-based nitride display device
abstract A color display device which may be used as a gallium nitride (LED) light emitting diode based traffic light is disclosed. Unlike previous large GaN based display devices, which have been built up from numerous small display elements formed on sapphire substrates, the disclosed device preferably uses an entire monolithic silicon wafer as both a substrate and for connection as a whole as a conducting first electrode, a light emitting layered structure of GaN-based materials over the entire monolithic silicon substrate, and a substantially transparent metallic second electrode layer over the layered structure. In order to emit desired traffic light colors (e.g. yellow, red), a color conversion layer is disposed over the transparent metallic electrode layer.
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