| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8249 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8222
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8249
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8248
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 |
| filingDate |
1997-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2000-08-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f3db31aeac483e80e4ecef76806d9440 |
| publicationDate |
2000-08-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6103560-A |
| titleOfInvention |
Process for manufacturing a semiconductor device |
| abstract |
Implantation of a high concentration of P type impurity in an emitter electrode can be prevented during forming a source-drain of PMOS and a extrinsic base, by keeping an insulating film intact only on an emitter electrode and simultaneously patterning the insulating electrode and a gate electrode, leading to prevention of increase and dispersion of an emitter resistance. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7005337-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6245609-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7018884-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004185632-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6303419-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004185611-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6569730-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7381991-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-10138648-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6423590-B2 |
| priorityDate |
1996-12-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |