patent/US-6097046-A

http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6097046-A

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filingDate	1993-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate	2000-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor	http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3db9bddd48f0799a2241651db3676c7e
publicationDate	2000-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber	US-6097046-A
titleOfInvention	Vertical field effect transistor and diode
abstract	A vertical field effect transistor (1400) and diode (1450) formed on a single III-V substrate. The diode cathode and the transistor drain or collector may be formed in a common layer (1408).
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http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419518858
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID89859
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419522218

Total number of triples: 295.