http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6093634-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88fc7f9eb617072238851d46591a0c76 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76801 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31051 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76837 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 1999-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2000-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c350230e6a698f1afd69939a112ca7e1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a83b471fc597bbb0918cb3646b24d6dd |
| publicationDate | 2000-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-6093634-A |
| titleOfInvention | Method of forming a dielectric layer on a semiconductor wafer |
| abstract | The present invention provides a method of forming a dielectric layer on a semiconductor wafer. The semiconductor wafer comprises a bottom dielectric layer and a plurality of metal lines each having a rectangular cross section positioned on the bottom dielectric layer. The method is performed in a high-density plasma chemical vapor deposition apparatus. A first deposition process at a first etching/deposition (E/D) ratio is performed to form a first dielectric layer with a predetermined thickness on the semiconductor wafer. The first dielectric layer covers the surface of the metal lines and forms a triangular ridge above each metal line. The upper side of each of the ridges has two slanted side-walls. Then, a second deposition process at a second E/D ratio is performed to form a second dielectric layer with a predetermined thickness on the semiconductor wafer with the second deposition process etching rate being near zero. The second dielectric layer above each metal line reduces the slope of the two slanted side-walls of the ridges. Thus, a dielectric layer with the first dielectric layer and the second layer is formed. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6365015-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008299681-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009004844-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6589854-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9741608-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8163571-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7745323-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7927990-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007004192-A1 |
| priorityDate | 1999-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.