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publicationNumber US-6090530-A
titleOfInvention Method and apparatus for depositing deep UV photoresist films
abstract An improved method and apparatus for forming a plasma-polymerized methylsilane (PPMS) photo-sensitive resist material includes the steps of pressurizing the chamber to between about 1 to about 2 Torr, heating the substrate to between about 50 DEG C. and about 200 DEG C., and plasma-polymerizing the precursor methylsilane gas to deposit a stable film having high-photosensitivity at high deposition rates.
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