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filingDate 1999-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2000-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_da72b39809dc8d62eae0444d0428035a
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publicationDate 2000-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-6086951-A
titleOfInvention Method for forming metallic capacitor
abstract A method of forming metallic capacitor. The method includes forming a lower electrode for forming the capacitor and a metal conductive line over an inter-layer dielectric such that there are gaps between and on the sides of the lower electrode and the metal conductive line. Thereafter, a first oxide layer is formed that fills the gap, and then a second oxide layer is formed over the inter-layer dielectric. The second oxide layer is later patterned to form a cap oxide layer having an opening that exposes a portion of the lower electrode. Subsequently, a thin dielectric layer is formed over the lower electrode and the cap oxide layer. Finally, an upper electrode is formed over the thin dielectric layer filling the opening.
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6958509-B2
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012146491-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004256654-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005012223-A1
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Total number of triples: 31.