| abstract |
In order to form a low resistance gate for use in a flash EPROM or EEPROM, a boron doped amorphous silicon layer is formed on an oxide layer and a layer of tungsten nitride formed thereon. A layer of tungsten silicide is then formed on the tungsten nitride layer acts as a barrier preventing "out diffusion" of a contaminating dopant, e.g., boron, and exhibits good adhesion to the amorphous silicon layer. The tungsten silicide layer, in turn, exhibits good adhesion to the tungsten nitride layer thereby preventing lifting of the silicide layer and dopant penetration. |