| abstract |
A method of correcting, or compensating for errors encountered in the transfer of patterns is disclosed for use with high resolution e-beam lithography. In a first embodiment, optical proximity effects are incorporated into the e-beam proximity effects by superimposing the two effects to arrive at a compensated dosage level database to produce the desired patterns. In a second embodiment, etching effects are also superimposed on the previous driving database by compensating the e-beam proximity data twice, that is, by over correcting it, to further improve the transfer of patterns without the undesirable effects. It is shown that corrections for a number of other process steps can also be incorporated into the database that drives the e-beam lithography machine in order to achieve high resolution patterns of about one-quarter-micron technology. |